Principal Semiconductor Device Engineer

The role

This person will provide technical leadership in the development and commercialization of vertical GaN power device technology. They will work across device architecture, process development, modeling, and characterization.

What you will do

• Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices
• Lead the definition and evolution of device architectures, performance targets, and design trade-offs
• Drive device modeling, simulation, and analytical understanding
• Plan and execute device development programs in shared fabs and external foundries
• Partner with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability
• Provide technical leadership in failure analysis, reliability physics, and root-cause investigations
• Oversee and interpret on-wafer and discrete device characterization
• Develop and review GDS layouts, test structures, and evaluation vehicles
• Support system-level understanding through application evaluation boards, measurements, and correlation
• Mentor junior engineers and influence technical best practices

Required qualifications

• PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
• Approximately 15–25 years of professional R&D experience in semiconductor device development
• Deep expertise in GaN or other wide-bandgap semiconductors (e.g., SiC)
• Demonstrated track record of technical impact and innovation in advanced device development programs
• Extensive experience with power device design in GaN and/or SiC, including vertical device concepts
• In-depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations
• Proven experience working in shared fab and foundry environments, including external technology transfers
• Strong proficiency in TCAD simulation for device physics, scaling, and optimization
• Advanced data analysis skills using Python, MATLAB, or equivalent tools
• Hands-on experience with GDS layout and test structure design
• Expertise in wide-bandgap power device failure analysis and reliability physics
• Experience with on-wafer automated DC/CV/dynamic testing and discrete component characterization

Nice to have

• power device experience

Benefits

• competitive salary
• comprehensive benefits package
• participation in our stock option program

About the company

Vertical Semiconductor is a venture-backed MIT spin-out leading the development of vertical gallium nitride (GaN) power electronics.